JICCE (한국정보통신학회)
Current Result Document :
| 한글제목(Korean Title) |
Resonance Characteristic Improvement of ZnO-Based FBAR Devices Fabricated on Thermally Annealed Bragg Reflectors |
| 영문제목(English Title) |
Resonance Characteristic Improvement of ZnO-Based FBAR Devices Fabricated on Thermally Annealed Bragg Reflectors |
| 저자(Author) |
Mun-Hyuk Yim
Dong-Hyun Kim
Linh Mai
Giwan Yoon
|
| 원문수록처(Citation) |
VOL 01 NO. 04 PP. 0199 ~ 0204 (2003. 12) |
한글내용
(Korean Abstract) |
|
영문내용
(English Abstract) |
In this paper, we present the thermal annealing effects of the W/SiO₂ multi-layer reflectors in ZnO-based FBAR devices with cobalt (Co) electrodes in comparison with those with aluminum (Al) electrodes. Various thermal annealing conditions have been implemented on the W/SiO₂ multi-layer reflectors formed on p-type (100) silicon substrates. The resonance characteristics could be significantly improved due to the thermal annealing and were observed to depend strongly on the annealing conditions applied to the reflectors. Particularly, the FBAR devices with the W/SiO₂ multi-layer reflectors annealed at 400℃/30min have shown superior resonance characteristics in terms of return loss and quality-factor (Q-factor). In addition, the use of Co electrodes has resulted in further improvement of the resonance characteristics as compared with the Al electrodes. As a result, the combined use of both the thermal annealing and Co electrodes seems very useful to more effectively improve the resonance characteristics of the FBAR devices with the W/SiO₂ multi-layer reflectors. |
| 키워드(Keyword) |
FBAR
Bragg reflector
Thermal annealing
Cobalt electrode
Return loss
Q-factor
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| 파일첨부 |
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